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The next generation memory technologies market has shown substantial growth in recent times as a result of the growing demand for quicker, economical and price effective memory solutions. the need for memory solutions that may serve applications in varied areas effectively is rising. The aim of this report is to produce an insight on the world next generation memory technologies markets current and projected trends and to hold out an exhaustive analysis of market potentials accessible. The report analyses opportunities within the developed and rising economies in order that corporations will build strategic selections and gain competitive edge.
How Big is The Global Next-Generation Memory Market?
The Next-Generation Memory Market is expected to be around US$ 10.70 Billion by 2025 at a CAGR of 27% in the given forecast period.
The major driving factors of Next-Generation Memory Market are as follows:
The major restraining factors of Next-Generation Memory Market are as follows:
The Next-Generation Memory Market has been segmented as below:
By Application:
By Product:
By Regional Analysis:
North America
Europe
Asia-Pacific
Rest of the World
The Next-Generation Memory Market is segmented on the lines of its application, product and regional. Basis of product is segmented into volatile and non-volatile memories. Non-volatile memories are being further sub segmented into Resistive random access memory (Re RAM), Phase change memory (PCM), Magneto-resistive random access memory (MRAM), Ferroelectric RAM (FeRAM) and others. Based on application it covers mobile phones, mass storage, industrial applications, consumer electronics, aerospace and defense, automotive electronics, smart cards and others. The Next-Generation Memory Market on geographic segmentation covers various regions such as North America, Europe, Asia Pacific, Latin America, Middle East and Africa. Each geographic market is further segmented to provide market revenue for select countries such as the U.S., Canada, U.K. Germany, China, Japan, India, Brazil, and GCC countries.
This report provides:
1) An overview of the global market for Next-Generation Memory Market and related technologies.
2) Analyses of global market trends, with data from 2016, estimates for 2017 and 2018, and projections of compound annual growth rates (CAGRs) through 2025.
3) Identifications of new market opportunities and targeted promotional plans for Next-Generation Memory Market
4) Discussion of research and development, and the demand for new products and new applications.
5) Comprehensive company profiles of major players in the industry.
Report scope:
The scope of the report includes a detailed study of Next-Generation Memory Market with the reasons given for variations in the growth of the industry in certain regions.
The report covers detailed competitive outlook including the market share and company profiles of the key participants operating in the global market. Key players profiled in the report include Samsung electronics, Crossbar Inc., Fujitsu Ltd, Micron technology, Inc., SK Hynix, Inc., Future electronics and others. Company profile includes assign such as company summary, financial summary, business strategy and planning, SWOT analysis and current developments.
The Top Companies Report is intended to provide our buyers with a snapshot of the industry’s most influential players.
Reasons to Buy this Report:
1) Obtain the most up to date information available on all Next-Generation Memory Market.
2) Identify growth segments and opportunities in the industry.
3) Facilitate decision making on the basis of strong historic and forecast of Next-Generation Memory Market.
4) Assess your competitor’s refining portfolio and its evolution.
Customization:
We can offer you custom research reports as per client’s special requirements.
1. Introduction
1.1 Report Description
1.2 Markets Covered
1.3 Stakeholders
2. Research Methodology
2.1 Research Data
2.2 Market Size Estimation and Data Triangulation
2.3 Research Assumptions
3. Summary with Insights
4. Market Overview
4.1 Introduction
4.2 Drivers
4.3 Restrains
4.4 Industry Trends
4.5 Porter’s Five Forces Analysis
5. Next-Generation Memory Market Analysis, By Application
5.1 Automotive Electronics
5.2 Smart Cards
5.3 Mass Storage
5.4 Industrial Applications
5.5 Consumer Electronics
5.6 Mobile Phones
5.7 Aerospace and Defence
6. Next-Generation Memory Market Analysis, By End-User
6.1 Volatile Next Generation Memory Technologies
6.1.1 Dynamic Random Access Memory (DRAM)
6.2 Non Volatile Next Generation Memory Technologies
6.2.1 Ferroelectric RAM (FeRAM)
6.2.2 Phase Change Memory (PCM)
6.2.3 Resistive Random Access Memory (Re RAM)
6.2.4 Magneto-Resistive Random Access Memory (MRAM)
6.3 Static Random Access Memory (SRAM)
7. Next-Generation Memory Market Analysis, By Region
7.1 North America
7.2 Europe
7.3 Asia-Pacific
7.4 Rest of the World
8. Competitive Overview
8.1 Introduction
8.2 New Product Launches
8.3 Acquisitions
8.4 Agreements, Partnerships, And Collaborations
8.5 Expansions
9. Company Profiles
9.1 Toshiba
9.2 Samsung Electronics
9.3 Texas Instruments
9.4 Cypress Semiconductor
9.5 Intel
9.6 Micron Technology
9.7 ROHM Semiconductor
9.8 Fujitsu
9.9 IBM
The Next-Generation Memory Market has been segmented as below:
By Application:
By Product:
By Regional Analysis:
North America
Europe
Asia-Pacific
Rest of the World
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