The GaN Semiconductor Devices Market is expected to be around US$ 26.39 Billion by 2027 at a CAGR of 5.51% in the given forecast period.
Gallium nitride is a semiconductor device compound used to make devices that deliver high output power with small physical volume and high effectiveness at microwave radio frequencies and ultra-high. It is projected to substitute silicon due to increase energy efficiency and low power consumption. The massive technological advances and increased demand for different types of wireless communication are most possibly to compel the requirement for energy-efficient systems. According to the rollout of latest communication technologies and concentration of makers in refining standards of the latest and advanced GaN technology can administer new opportunities to the market. Power devices are being optimized since energy saving is becoming a top priority due to the reduction of oil sources and with limited sources of energy. Nevertheless, these losses are being minimalized using gallium nitride devices which possess low conduction resistance characteristics and high breakdown voltage, thus driving its demand. Also, it has led to the development of gallium nitride semiconductor devices especially for high efficiency power supplies in server and other IT equipment and in the rapidly expanding hybrid electric vehicles and electric vehicles.
The global GaN Semiconductor Devices market is segregated on the basis of Product Outlook as GaN Radio Frequency Devices, Opto-semiconductors, and Power Semiconductors. Based on Component Outlook the global GaN Semiconductor Devices market is segmented in Transistor, Diode, Rectifier, Power IC, and Others. Based on Wafer Size Outlook the global GaN Semiconductor Devices market is segmented in 2-inch, 4-inch, 6-inch, and 8-inch.
Based on End-use Outlook, the global GaN Semiconductor Devices market is segmented in Automotive, Consumer Electronics, Defense & Aerospace, Healthcare, Information & Communication Technology, Industrial & Power, and Others.
The global GaN Semiconductor Devices market report provides geographic analysis covering regions, such as North America, Europe, Asia-Pacific, and Rest of the World. The GaN Semiconductor Devices market for each region is further segmented for major countries including the U.S., Canada, Germany, the U.K., France, Italy, China, India, Japan, Brazil, South Africa, and others.
Competitive Rivalry
Cree, Inc., Efficient Power Conversion Corporation, Fujitsu Ltd., GaN Systems, Infineon Technologies AG, NexGen Power Systems, NXP Semiconductor, Qorvo, Inc., Texas Instruments Incorporated, Toshiba Corporation, and others are among the major players in the global GaN Semiconductor Devices market. The companies are involved in several growth and expansion strategies to gain a competitive advantage. Industry participants also follow value chain integration with business operations in multiple stages of the value chain.
The GaN Semiconductor Devices Market has been segmented as below:
GaN Semiconductor Devices Market, By Product Outlook
GaN Semiconductor Devices Market, By Component Outlook
GaN Semiconductor Devices Market, By Wafer Size Outlook
GaN Semiconductor Devices Market, By End-use Outlook
GaN Semiconductor Devices Market, By Region
GaN Semiconductor Devices Market, By Company
The report covers:
Report Scope:
The global GaN Semiconductor Devices market report scope includes detailed study covering underlying factors influencing the industry trends. The report covers analysis on regional and country level market dynamics. The scope also covers competitive overview providing company market shares along with company profiles for major revenue contributing companies. The report scope includes detailed competitive outlook covering market shares and profiles key participants in the global GaN Semiconductor Devices market share. Major industry players with significant revenue share include Cree, Inc., Efficient Power Conversion Corporation, Fujitsu Ltd., GaN Systems, Infineon Technologies AG, NexGen Power Systems, NXP Semiconductor, Qorvo, Inc., Texas Instruments Incorporated, Toshiba Corporation, and others.
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1. Introduction
1.1. Key Points
1.2. Report Description
1.3. Markets Covered
1.4. Stakeholders
2. Research Methodology
2.1. Research Scope
2.2. Research Methodology
2.2.1. Market Research Process
2.2.2. Research Methodology
2.2.2.1. Secondary Research
2.2.2.2. Primary Research
2.2.2.3. Models for Estimation
2.3. Market Size Estimation
2.3.1. Bottom-Up Approach
2.3.2. Top-Down Approach
3. Executive Summary
4. Market Overview
4.1. Introduction
4.2. Drivers
4.3. Restraints
4.4. Opportunities
4.5. Challenges
5. GaN Semiconductor Devices Market, By Product Outlook
5.1. Key Points
5.2. GaN Radio Frequency Devices
5.3. Opto-semiconductors
5.4. Power Semiconductors
6. GaN Semiconductor Devices Market, By Component Outlook
6.1. Key Points
6.2. Transistor
6.3. Diode
6.4. Rectifier
6.5. Power IC
6.6. Others
7. GaN Semiconductor Devices Market, By Wafer Size Outlook
7.1. Key Points
7.2. 2-inch
7.3. 4-inch
7.4. 6-inch
7.5. 8-inch
8. GaN Semiconductor Devices Market, By End-use Outlook
8.1. Key Points
8.2. Automotive
8.3. Consumer Electronics
8.4. Defense & Aerospace
8.5. Healthcare
8.6. Information & Communication Technology
8.7. Industrial & Power
8.8. Others
9. Competitive Landscape
9.1. Introduction
9.2. Recent Developments
9.2.1. Mergers & Acquisitions
9.2.2. New Product Developments
9.2.3. Portfolio/Production Capacity Expansions
9.2.4. Joint Ventures, Collaborations, Partnerships & Agreements
9.2.5. Others
10. Company Profiles
10.1 Cree, Inc.
10.1.1 Company Overview
10.1.2 Product/Service Landscape
10.1.3 Financial Overview
10.1.4 Recent Developments
10.2 Efficient Power Conversion Corporation
10.2.1 Company Overview
10.2.2 Product/Service Landscape
10.2.3 Financial Overview
10.2.4 Recent Developments
10.3 Fujitsu Ltd.
10.3.1 Company Overview
10.3.2 Product/Service Landscape
10.3.3 Financial Overview
10.3.4 Recent Developments
10.4 GaN Systems
10.4.1 Company Overview
10.4.2 Product/Service Landscape
10.4.3 Financial Overview
10.4.4 Recent Developments
10.5 Infineon Technologies AG
10.5.1 Company Overview
10.5.2 Product/Service Landscape
10.5.3 Financial Overview
10.5.4 Recent Developments
10.6 NexGen Power Systems
10.6.1 Company Overview
10.6.2 Product/Service Landscape
10.6.3 Financial Overview
10.6.4 Recent Developments
10.7 NXP Semiconductor
10.7.1 Company Overview
10.7.2 Product/Service Landscape
10.7.3 Financial Overview
10.7.4 Recent Developments
10.8 Qorvo, Inc.
10.8.1 Company Overview
10.8.2 Product/Service Landscape
10.8.3 Financial Overview
10.8.4 Recent Developments
10.9 Texas Instruments Incorporated.
10.9.1 Company Overview
10.9.2 Product/Service Landscape
10.9.3 Financial Overview
10.9.4 Recent Developments
10.10 Toshiba Corporation
10.10.1 Company Overview
10.10.2 Product/Service Landscape
10.10.3 Financial Overview
10.10.4 Recent Developments
The GaN Semiconductor Devices Market has been segmented as below:
GaN Semiconductor Devices Market, By Product Outlook
GaN Semiconductor Devices Market, By Component Outlook
GaN Semiconductor Devices Market, By Wafer Size Outlook
GaN Semiconductor Devices Market, By End-use Outlook
GaN Semiconductor Devices Market, By Region
GaN Semiconductor Devices Market, By Company
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